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The RF Workbench / Re: Engineering Paper in 1997 devotes discussion on class E amp 13 mhZ
« on: January 25, 2018, 1844 UTC »
Times and tech have changed, but the same basic rules still apply. Mosfet technologies aside from GaN and SiC have not changed all the radically in the last 20 years. Sine wave drive is an old way of doing things, which is why we see wide adoption of driver IC technology now, fed by TTL level control. You cannot use sine wave drive with the newer SiC devices, due to their extremely limited negative gate swing. Still, at 7 MHz, a 1000pf input cap mosfet with an IC driver, I'm still seeing several watts per device of gate drive input power. The old rules still spply, high power requires high voltage. Some number crunching on a 2.5-5KW solid state SW TX tells me around 550VDC is going to be required for modulation peaks, and that WILL HURT you.
With great power comes great responsibility....
+-RH
With great power comes great responsibility....
+-RH



